Charge lifetime improvement of the Continuous Electron Beam Accelerator Facility photogun with a biased anode
GaAs photocathodes in dc high-voltage photoguns are highly susceptible to ion back-bombardment, which reduces the photocathode quantum efficiency and limits the useful operating lifetime for producing polarized electron beams. This paper demonstrates that applying a small positive bias to the photogun anode can significantly suppress ion back-bombardment and increase charge lifetime. This technique was studied extensively using the Continuous Electron Beam Accelerator Facility photogun, where highly polarized electron beams created using a strained-superlattice photocathode were used and charge lifetimes improved by almost a factor of 2. A new simulation code was developed tomore »